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Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BSS64LT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 225mW
Transition Frequency (fT): 60MHz
DC Current Gain (hFE@Ic,Vce): 20@10mA,1V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,15mA
Package: SOT-23-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 60MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BSS64
detail: Bipolar (BJT) Transistor NPN 80V 200mA 60MHz 350mW Surface Mount SOT-23-3