دیتاشیت BC808-25LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
BC808-25LT1G
|
| حجم فایل |
70.363
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BC808-25LT1G
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
500mA
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Power Dissipation (Pd):
300mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
160@100mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
25V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
700mV@500mA,50mA
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Package:
SOT-23-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
25V
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Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
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Power - Max:
300mW
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Frequency - Transition:
100MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3 (TO-236)
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Base Part Number:
BC808
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detail:
Bipolar (BJT) Transistor PNP 25V 500mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
