MMBT4126LT1G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MMBT4126LT1G
|
|
حجم فایل
|
73.65
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi MMBT4126LT1G
-
Transistor Type:
PNP
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
200mA
-
Power Dissipation (Pd):
225mW
-
Transition Frequency (fT):
250MHz
-
DC Current Gain (hFE@Ic,Vce):
120@2mA,1V
-
Collector Cut-Off Current (Icbo):
-
-
Collector-Emitter Breakdown Voltage (Vceo):
25V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
400mV@50mA,5mA
-
Package:
SOT-23-3
-
Manufacturer:
onsemi
-
Series:
*
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
Base Part Number:
MMBT4126
-
detail:
Bipolar (BJT) Transistor
