FQD6N25TM دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
FQD6N25TM
|
|
حجم فایل
|
70.016
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
10
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FQD6N25TM
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.5W;45W
-
Total Gate Charge (Qg@Vgs):
8.5nC@10V
-
Drain Source Voltage (Vdss):
250V
-
Input Capacitance (Ciss@Vds):
300pF@25V
-
Continuous Drain Current (Id):
4.4A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1Ω@2.2A,10V
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
QFET®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
250V
-
Current - Continuous Drain (Id) @ 25°C:
4.4A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.2A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
8.5nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta), 45W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D-Pak
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
FQD6
-
detail:
N-Channel 250V 4.4A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
