AFGHL40T65SPD دیتاشیت

AFGHL40T65SPD

مشخصات دیتاشیت

نام دیتاشیت AFGHL40T65SPD
حجم فایل 67.565 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت AFGHL40T65SPD

دانلود دیتاشیت

سایر مستندات

AFGHL40T65SPD 10 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi AFGHL40T65SPD
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 80A
  • Power Dissipation (Pd): 267W
  • Turn?on Delay Time (Td(on)): 18ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 1.16mJ
  • Total Gate Charge (Qg@Ic,Vge): 36nC
  • Turn?off Delay Time (Td(off)): 35ns
  • Pulsed Collector Current (Icm): 120A
  • Turn?off Switching Loss (Eoff): 0.27mJ
  • Diode Reverse Recovery Time (Trr): 35ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,40A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Base Part Number: AFGHL40
  • detail: IGBT Trench Field Stop 650V 80A 267W Through Hole TO-247-3

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