AFGHL50T65SQDC دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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AFGHL50T65SQDC
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حجم فایل
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318.062
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi AFGHL50T65SQDC
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
100A
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Power Dissipation (Pd):
238W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.131mJ
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Pulsed Collector Current (Icm):
200A
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Turn?off Switching Loss (Eoff):
0.096mJ
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
100A
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Current - Collector Pulsed (Icm):
200A
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Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
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Power - Max:
238W
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Switching Energy:
131µJ (on), 96µJ (off)
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Input Type:
Standard
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Gate Charge:
94nC
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Td (on/off) @ 25°C:
17.6ns/94.4ns
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Test Condition:
400V, 12.5A, 4.7Ohm, 15V
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3 Variant
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Supplier Device Package:
TO-247-3
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Base Part Number:
AFGHL50
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detail:
IGBT Field Stop 650V 100A 238W Through Hole TO-247-3
