NTHL020N090SC1 دیتاشیت

NTHL020N090SC1

مشخصات دیتاشیت

نام دیتاشیت NTHL020N090SC1
حجم فایل 90.69 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NTHL020N090SC1

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سایر مستندات

NTHL020N090SC1 8 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTHL020N090SC1
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 503W
  • Total Gate Charge (Qg@Vgs): 196nC@15V
  • Drain Source Voltage (Vdss): 900V
  • Input Capacitance (Ciss@Vds): 4415pF@450V
  • Continuous Drain Current (Id): 118A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.3V@20mA
  • Reverse Transfer Capacitance (Crss@Vds): 24pF@450V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@18V,60A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 15V
  • Vgs (Max): +19V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 450V
  • FET Feature: -
  • Power Dissipation (Max): 503W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3 Variant
  • Base Part Number: NTHL02
  • detail: N-Channel 900V 118A (Tc) 503W (Tc) Through Hole TO-247-3

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