NVHL020N090SC1 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVHL020N090SC1
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حجم فایل
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269.258
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
118A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
15V
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Rds On (Max) @ Id, Vgs:
28mOhm @ 60A, 15V
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Vgs(th) (Max) @ Id:
4.3V @ 20mA
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Gate Charge (Qg) (Max) @ Vgs:
196nC @ 15V
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Vgs (Max):
+19V, -10V
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Input Capacitance (Ciss) (Max) @ Vds:
4415pF @ 450V
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FET Feature:
-
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Power Dissipation (Max):
503W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-3
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Package / Case:
TO-247-3 Variant
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Base Part Number:
NVHL02
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detail:
N-Channel 900V 118A (Tc) 503W (Tc) Through Hole TO-247-3
