MMBTH10M3T5G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MMBTH10M3T5G
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حجم فایل
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74.114
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MMBTH10M3T5G
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Transistor Type:
NPN
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Power Dissipation (Pd):
265mW
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Transition Frequency (fT):
650MHz
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DC Current Gain (hFE@Ic,Vce):
60@4mA,10V
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Collector-Emitter Breakdown Voltage (Vceo):
25V
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Package:
SOT-723
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
25V
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Frequency - Transition:
650MHz
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Noise Figure (dB Typ @ f):
-
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Gain:
-
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Power - Max:
265mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
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Current - Collector (Ic) (Max):
-
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-723
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Supplier Device Package:
SOT-723
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Base Part Number:
MMBTH10
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detail:
RF Transistor NPN 25V 650MHz 265mW Surface Mount SOT-723
