NSVMMBT3906TT1G دیتاشیت

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مشاهده دیتاشیت NSVMMBT3906TT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSVMMBT3906TT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Transition Frequency (fT): 250MHz
DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@5mA,50mA
Package: -
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: MMBT3906
detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SC-75, SOT-416