دیتاشیت 2SD1628G-TD-E
مشخصات دیتاشیت
نام دیتاشیت |
2SD1628
|
حجم فایل |
325.662
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SD1628G-TD-E
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
120MHz
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DC Current Gain (hFE@Ic,Vce):
120@500mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
20V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@3A,60mA
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Package:
SOT-89
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Discontinued at Digi-Key
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Current - Collector (Ic) (Max):
5A
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Voltage - Collector Emitter Breakdown (Max):
20V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 60mA, 3A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
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Power - Max:
500mW
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Frequency - Transition:
120MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
PCP
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Base Part Number:
2SD1628
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detail:
Bipolar (BJT) Transistor NPN 20V 5A 120MHz 500mW Surface Mount PCP