STY145N65M5 دیتاشیت

STY145N65M5

مشخصات دیتاشیت

نام دیتاشیت STY145N65M5
حجم فایل 59.601 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت STY145N65M5

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سایر مستندات

STY145N65M5 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STY145N65M5
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 625W
  • Total Gate Charge (Qg@Vgs): 414nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 18.5nF@100V
  • Continuous Drain Current (Id): 138A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 11pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,69A
  • Package: TO-247-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ V
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 414nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: MAX247™
  • Package / Case: TO-247-3
  • Base Part Number: STY145
  • detail: N-Channel 650V 138A (Tc) 625W (Tc) Through Hole MAX247™

محصولات مشابه