MMBT5551M3T5G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MMBT5551M3T5G
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حجم فایل
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81.051
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MMBT5551M3T5G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
60mA
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Power Dissipation (Pd):
265mW
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DC Current Gain (hFE@Ic,Vce):
80@10mA,5V
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Collector Cut-Off Current (Icbo):
50nA
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Collector-Emitter Breakdown Voltage (Vceo):
160V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@5mA,50mA
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Package:
SOT-723
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
60mA
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Voltage - Collector Emitter Breakdown (Max):
160V
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Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
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Current - Collector Cutoff (Max):
50nA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
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Power - Max:
265mW
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
SOT-723
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Supplier Device Package:
SOT-723
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Base Part Number:
MMBT5551
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detail:
Bipolar (BJT) Transistor NPN 160V 60mA 265mW Surface Mount SOT-723
