NSM4002MR6T1G دیتاشیت

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مشاهده دیتاشیت NSM4002MR6T1G-Isee	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSM4002MR6T1G
Transistor Type: 2 NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 200mA;500mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 300MHz;100MHz
DC Current Gain (hFE@Ic,Vce): 100@10mA,1V;250@100mA,1V
Collector Cut-Off Current (Icbo): -
Collector-Emitter Breakdown Voltage (Vceo): 40V;45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA;700mV@500mA,50mA
Package: SC-74-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 200mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V, 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 250 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 300MHz, 100MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74
Base Part Number: NSM400
detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V, 45V 200mA, 500mA 300MHz, 100MHz 500mW Surface Mount SC-74