NSS20300MR6T1G دیتاشیت

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مشاهده دیتاشیت NSS20300MR6T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSS20300MR6T1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 3A
Power Dissipation (Pd): 1.06W
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 230@1.5A,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 20V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@2A,20mA
Package: TSOP-6-1.5mm
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Power - Max: 545mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: NSS203
detail: Bipolar (BJT) Transistor PNP 20V 3A 100MHz 545mW Surface Mount 6-TSOP