NTR3A052PZT1G دیتاشیت

NTR3A052PZT1G

مشخصات دیتاشیت

نام دیتاشیت NTR3A052PZT1G
حجم فایل 95.408 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTR3A052PZT1G-Isee

دانلود دیتاشیت

سایر مستندات

NTR3A052PZ 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTR3A052PZT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 860mW
  • Total Gate Charge (Qg@Vgs): 11.9nC@4.5V
  • Input Capacitance (Ciss@Vds): 1243pF@4V
  • Continuous Drain Current (Id): 3.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 47mΩ@3.5A,4.5V
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1243pF @ 4V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: NTR3A0
  • detail: P-Channel 20V 3.6A (Ta) 860mW (Ta) Surface Mount SOT-23 (TO-236AB)

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