دیتاشیت EFC4626R-TR
مشخصات دیتاشیت
| نام دیتاشیت |
EFC4626R
|
| حجم فایل |
466.681
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
2PCSNChannel(Common Drain)
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi EFC4626R-TR
-
Power Dissipation (Pd):
1.4W
-
Total Gate Charge (Qg@Vgs):
7.5nC@4.5V
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
CSP-4
-
Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual) Common Drain
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FET Feature:
Logic Level Gate, 2.5V Drive
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Drain to Source Voltage (Vdss):
-
-
Current - Continuous Drain (Id) @ 25°C:
-
-
Rds On (Max) @ Id, Vgs:
-
-
Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
7.5nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds:
-
-
Power - Max:
1.4W
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Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
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Package / Case:
4-XFBGA
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Supplier Device Package:
-
-
Base Part Number:
EFC4626
-
detail:
Mosfet Array 2 N-Channel (Dual) Common Drain 1.4W Surface Mount
