NSBC114YPDXV6T1G دیتاشیت

NSBC114YPDXV6T1G

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نام دیتاشیت NSBC114YPDXV6T1G
حجم فایل 94.693 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: onsemi NSBC114YPDXV6T1G
  • Transistor Type: 1 NPN,1 PNP - Pre-Biased
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@300uA,10mA
  • Package: SOT-563
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
  • Base Part Number: NSBC11
  • detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

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