دیتاشیت FQT4N20LTF
مشخصات دیتاشیت
| نام دیتاشیت |
FQT4N20L
|
| حجم فایل |
855.421
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQT4N20LTF
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Power Dissipation (Pd):
2.2W
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Drain Source Voltage (Vdss):
200V
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Continuous Drain Current (Id):
850mA
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.35Ω@10V,425mA
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Package:
SOT-223
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
850mA (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
1.35Ohm @ 425mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2.2W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-223-4
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Package / Case:
TO-261-4, TO-261AA
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Base Part Number:
FQT4
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detail:
N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4
