FDC8886 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDC8886	دانلود دیتاشیت

FDC8886 8 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDC8886
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 1.6W
Total Gate Charge (Qg@Vgs): 7.4nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 465pF@15V
Continuous Drain Current (Id): 6.5A;8A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@6.5A,10V
Package: TSOT-23-6
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Mounting Type: Surface Mount
Supplier Device Package: SuperSOT™-6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: FDC8886
detail: N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6