MCH6321-TL-E دیتاشیت

MCH6321-TL-E

مشخصات دیتاشیت

نام دیتاشیت MCH6321-TL-E
حجم فایل 60.05 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت MCH6321-TL-E

دانلود دیتاشیت

سایر مستندات

MCH6321 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi MCH6321-TL-E
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 1.5W
  • Total Gate Charge (Qg@Vgs): 4.6nC@4.5V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 375pF@10V
  • Continuous Drain Current (Id): 4A
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): 58pF@10V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 63mΩ@4.5V,2A
  • Package: MCPH-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-SMD, Flat Leads
  • Base Part Number: MCH63
  • detail: P-Channel 20V 4A (Ta) Surface Mount 6-MCPH

محصولات مشابه