MCH3109-TL-E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MCH3109-TL-E
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حجم فایل
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58.573
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MCH3109-TL-E
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
3A
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Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
380MHz
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DC Current Gain (hFE@Ic,Vce):
200@500mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
155mV@1.5A,30mA
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Package:
MCPH-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
155mV @ 75mA, 1.5A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
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Power - Max:
800mW
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Frequency - Transition:
380MHz
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Mounting Type:
Surface Mount
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Package / Case:
SC-70, SOT-323
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Supplier Device Package:
3-MCPH
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Base Part Number:
MCH31
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detail:
Bipolar (BJT) Transistor PNP 30V 3A 380MHz 800mW Surface Mount 3-MCPH
