NSV20201LT1G دیتاشیت

NSV20201LT1G

مشخصات دیتاشیت

نام دیتاشیت NSV20201LT1G
حجم فایل 76.424 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NSV20201LT1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 2A
  • Power Dissipation (Pd): 460mW
  • Transition Frequency (fT): 150MHz
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 72mV@2A,200mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 460mW
  • Frequency - Transition: 150MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Base Part Number: NSV202
  • detail: Bipolar (BJT) Transistor NPN 20V 2A 150MHz 460mW Surface Mount SOT-23-3 (TO-236)

محصولات مشابه