MCH6664-TL-W دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MCH6664-Isee	دانلود دیتاشیت

مستندات دیگری یافت نشد!

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi MCH6664-TL-W
Operating Temperature: +150°C@(Tj)
Power Dissipation (Pd): 800mW
Total Gate Charge (Qg@Vgs): 2.2nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 82pF@10V
Continuous Drain Current (Id): 1.5A
Gate Threshold Voltage (Vgs(th)@Id): 2.6V@1mA
Reverse Transfer Capacitance (Crss@Vds): 16pF@10V
Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,800mA
Package: SOT-363-6(SC-70-6)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 325mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
Power - Max: 800mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/MCPH6
Base Part Number: MCH66
detail: Mosfet Array 2 P-Channel (Dual) 30V 1.5A 800mW Surface Mount SC-88FL/MCPH6