NTLJF4156NTAG دیتاشیت

NTLJF4156NTAG

مشخصات دیتاشیت

نام دیتاشیت NTLJF4156NTAG
حجم فایل 96.414 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت NTLJF4156NTAG-Isee

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سایر مستندات

NTLJF4156N 9 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTLJF4156NTAG
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 710mW
  • Total Gate Charge (Qg@Vgs): 6.5nC@4.5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 427pF@15V
  • Continuous Drain Current (Id): 2.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@2A,4.5V
  • Package: WDFN-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 710mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
  • Base Part Number: NTLJF41
  • detail: N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2)

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