NTJD4152P دیتاشیت

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مشاهده دیتاشیت NTJD4152P	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTJD4152PT2G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 272mW
Total Gate Charge (Qg@Vgs): 2.2nC@4.5V
Input Capacitance (Ciss@Vds): 155pF@20V
Continuous Drain Current (Id): 880mA
Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@880mA,4.5V
Package: SOT-363-6(SC-70-6)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Power - Max: 272mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NTJD41
detail: Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363