دیتاشیت ECH8657-TL-H
مشخصات دیتاشیت
| نام دیتاشیت |
ECH8657
|
| حجم فایل |
311.018
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi ECH8657-TL-H
-
Power Dissipation (Pd):
1.5W
-
Total Gate Charge (Qg@Vgs):
4.5nC@10V
-
Drain Source Voltage (Vdss):
35V
-
Input Capacitance (Ciss@Vds):
230pF@20V
-
Continuous Drain Current (Id):
4.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
59mΩ@2A,10V
-
Package:
SOT-28FL
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
2 N-Channel (Dual)
-
FET Feature:
Logic Level Gate
-
Drain to Source Voltage (Vdss):
35V
-
Current - Continuous Drain (Id) @ 25°C:
4.5A
-
Rds On (Max) @ Id, Vgs:
59mOhm @ 2A, 10V
-
Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
4.5nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 20V
-
Power - Max:
1.5W
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
-
Package / Case:
8-SMD, Flat Lead
-
Supplier Device Package:
8-ECH
-
Base Part Number:
ECH8657
-
detail:
Mosfet Array 2 N-Channel (Dual) 35V 4.5A 1.5W Surface Mount 8-ECH
