NTHD4508NT1G دیتاشیت

NTHD4508NT1G

مشخصات دیتاشیت

نام دیتاشیت NTHD4508NT1G
حجم فایل 90.475 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTHD4508NT1G

دانلود دیتاشیت

سایر مستندات

NTHD4508N 6 pages

مشخصات فنی

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTHD4508NT1G
  • Power Dissipation (Pd): 1.13W
  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@4.5V,3.1A
  • Package: SMD-8P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET™
  • Base Part Number: NTHD45
  • detail: Mosfet Array 2 N-Channel (Dual) 20V 3A 1.13W Surface Mount ChipFET™

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