1HP04CH-TL-W دیتاشیت

1HP04CH-TL-W

مشخصات دیتاشیت

نام دیتاشیت 1HP04CH-TL-W
حجم فایل 66.839 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت 1HP04CH-TL-W

دانلود دیتاشیت

سایر مستندات

1HP04CH 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi 1HP04CH-TL-W
  • Power Dissipation (Pd): -
  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 170mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18Ω@10V,80mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: 1HN04
  • detail: P-Channel 100V 170mA (Ta) Surface Mount 3-CPH

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