SSN1N45BTA دیتاشیت

SSN1N45BTA

مشخصات دیتاشیت

نام دیتاشیت SSN1N45BTA
حجم فایل 64.984 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت SSN1N45BTA

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سایر مستندات

SSN1N45B 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi SSN1N45BTA
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 900mW
  • Total Gate Charge (Qg@Vgs): 8.5nC@10V
  • Drain Source Voltage (Vdss): 450V
  • Input Capacitance (Ciss@Vds): 240pF@25V
  • Continuous Drain Current (Id): 500mA
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.25Ω@250mA,10V
  • Package: TO-92
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Vgs (Max): ±50V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: SSN1N
  • detail: N-Channel 450V 500mA (Tc) 900mW (Ta) Through Hole TO-92-3

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