NSS60101DMTTBG دیتاشیت

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مشاهده دیتاشیت NSS60101DMT-Isee	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 2.27W
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Base Part Number: NSS601
detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 180MHz 2.27W Surface Mount 6-WDFN (2x2)