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- دیتاشیت NJVMJD122T4G-VF01
NJVMJD122T4G-VF01 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NJVMJD122T4G-VF01 |
|---|---|
| حجم فایل | 58.192 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت NJVMJD122T4G-VF01 |
دانلود دیتاشیت |
|---|
سایر مستندات
MJD122,MJD127 12 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi NJVMJD122T4G-VF01
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.75W
- Transition frequency (fT): -
- DC current gain (hFE@Vce,Ic): 1000@4V,4A
- Collector-emitter voltage (Vceo): 100V
- Collector cut-off current (Icbo@Vcb): 10uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@80mA,8A
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 20W
- Frequency - Transition: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: MJD122
- detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Surface Mount DPAK