دیتاشیت EFC8811R-TF
مشخصات دیتاشیت
| نام دیتاشیت |
EFC8811R
|
| حجم فایل |
724.773
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
2PCSNChannel(Common Drain)
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi EFC8811R-TF
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
2.5W
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
CSP-6
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
2 N-Channel (Dual) Common Drain
-
FET Feature:
Logic Level Gate, 2.5V Drive
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Drain to Source Voltage (Vdss):
-
-
Current - Continuous Drain (Id) @ 25°C:
-
-
Rds On (Max) @ Id, Vgs:
-
-
Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
-
-
Input Capacitance (Ciss) (Max) @ Vds:
-
-
Power - Max:
2.5W
-
Mounting Type:
Surface Mount
-
Package / Case:
6-SMD, No Lead
-
Supplier Device Package:
6-CSP (1.77x3.54)
-
Base Part Number:
EFC8811
-
detail:
Mosfet Array 2 N-Channel (Dual) Common Drain 2.5W Surface Mount 6-CSP (1.77x3.54)
