NTMFS4841NHT1G دیتاشیت

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مشاهده دیتاشیت NTMFS4841NH	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 870mW;41.7W
Total Gate Charge (Qg@Vgs): 33nC@11.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 2113pF@12V
Continuous Drain Current (Id): 8.6A;59A
Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@30A,10V
Package: SOP-8
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V
FET Feature: -
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NTMFS4
detail: N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)