دیتاشیت NTD20P06LT4G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD20P06L
|
| حجم فایل |
142.966
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTD20P06LT4G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
65W
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Total Gate Charge (Qg@Vgs):
26nC@5V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
1190pF@25V
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Continuous Drain Current (Id):
15.5A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
150mΩ@5V,7.5A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
15.5A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
5V
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Rds On (Max) @ Id, Vgs:
150mOhm @ 7.5A, 5V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
26nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1190pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
65W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
NTD20
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detail:
P-Channel 60V 15.5A (Ta) 65W (Tc) Surface Mount DPAK
