MBRD640CTT4G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MBRD640CTT4G
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حجم فایل
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66.815
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Diodes/Schottky Barrier Diodes (SBD)
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Datasheet:
onsemi MBRD650CTT4G
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Diode Configuration:
Dual Common Cathode
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Reverse Voltage (Vr):
50V
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Forward Voltage (Vf@If):
700mV@3A
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Reverse Leakage Current (Ir):
100uA@50V
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Average Rectified Current (Io):
3A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
SWITCHMODE™
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Packaging:
Tube
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Part Status:
Obsolete
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Diode Type:
Schottky
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Voltage - DC Reverse (Vr) (Max):
50V
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Current - Average Rectified (Io) (per Diode):
3A
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Voltage - Forward (Vf) (Max) @ If:
700mV @ 3A
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Speed:
Fast Recovery =< 500ns, > 200mA (Io)
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Current - Reverse Leakage @ Vr:
100µA @ 50V
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Operating Temperature - Junction:
-65°C ~ 175°C
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MBRD650
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detail:
Diode Array 1 Pair Common Cathode Schottky 50V 3A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
