NJVNJD1718T4G دیتاشیت

NJVNJD1718T4G

مشخصات دیتاشیت

نام دیتاشیت NJVNJD1718T4G
حجم فایل 90.326 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NJVNJD1718T4G

دانلود دیتاشیت

سایر مستندات

NJD1718T4G 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NJVNJD1718T4G
  • Transistor Type: PNP
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 2A
  • Power Dissipation (Pd): 1.68W
  • Transition Frequency (fT): 80MHz
  • DC Current Gain (hFE@Ic,Vce): 70@500mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@50mA,1A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 1.68W
  • Frequency - Transition: 80MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NJD1718
  • detail: Bipolar (BJT) Transistor PNP 50V 2A 80MHz 1.68W Surface Mount DPAK

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