دیتاشیت 2SK536-TB-E
مشخصات دیتاشیت
| نام دیتاشیت |
2SK536
|
| حجم فایل |
188.925
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
50V
-
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
20Ohm @ 10mA, 10V
-
Vgs(th) (Max) @ Id:
-
-
Vgs (Max):
±12V
-
Input Capacitance (Ciss) (Max) @ Vds:
15pF @ 10V
-
FET Feature:
-
-
Power Dissipation (Max):
200mW (Ta)
-
Operating Temperature:
125°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SC-59
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
2SK536
-
detail:
N-Channel 50V 100mA (Ta) 200mW (Ta) Surface Mount SC-59
