ECH8501-TL-H دیتاشیت

ECH8501-TL-H

مشخصات دیتاشیت

نام دیتاشیت ECH8501-TL-H
حجم فایل 56.634 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت ECH8501-TL-H

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سایر مستندات

ECH8501 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi ECH8501-TL-H
  • Transistor Type: 1PCSNPN&1PCSPNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 1.6W
  • Transition Frequency (fT): 280MHz;260MHz
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 75mV@2.5A,125mA;100mV@2.5A,125mA
  • Package: SOT-28FL
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 110mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.6W
  • Frequency - Transition: 280MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
  • Base Part Number: ECH8501
  • detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 5A 280MHz 1.6W Surface Mount 8-ECH

محصولات مشابه