FDMA905P دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FDMA905P
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حجم فایل
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68.141
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDMA905P
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.4W
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Total Gate Charge (Qg@Vgs):
29nC@6V
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Drain Source Voltage (Vdss):
12V
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Input Capacitance (Ciss@Vds):
3405pF@6V
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Continuous Drain Current (Id):
10A
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Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
437pF@6V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
14mΩ@4.5V,10A
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Package:
MicroFET
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
12V
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Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
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Rds On (Max) @ Id, Vgs:
16mOhm @ 10A, 4.5V
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Vgs(th) (Max) @ Id:
1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
29nC @ 6V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
3405pF @ 6V
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FET Feature:
-
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Power Dissipation (Max):
2.4W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
6-MicroFET (2x2)
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Package / Case:
6-VDFN Exposed Pad
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Base Part Number:
FDMA90
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detail:
P-Channel 12V 10A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
