NTMYS011N04CTWG دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMYS011N04CTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.8W;28W
Total Gate Charge (Qg@Vgs): 7.9nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 420pF@25V
Continuous Drain Current (Id): 13A;35A
Gate Threshold Voltage (Vgs(th)@Id): 3.5V@20uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10A,10V
Package: LFPAK-4
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 4-LFPAK
Package / Case: SOT-1023, 4-LFPAK
Base Part Number: NTMYS01
detail: N-Channel 40V 13A (Ta), 35A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount 4-LFPAK