NTD4860NT4G دیتاشیت

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RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTD4860NT4G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 1.28W;50W
Total Gate Charge (Qg@Vgs): 16.5nC@4.5V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 1308pF@12V
Continuous Drain Current (Id): 10.4A;65A
Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@10V,30A
Package: TO-252
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
FET Feature: -
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NTD48
detail: N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Surface Mount DPAK