FQD12N20LTM Datasheet
Datasheet specifications
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Datasheet's name
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FQD12N20LTM
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File size
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70.016
KB
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File type
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pdf
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Number of pages
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10
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Technical specifications
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQD12N20LTM
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W;55W
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Total Gate Charge (Qg@Vgs):
21nC@5V
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Drain Source Voltage (Vdss):
200V
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Input Capacitance (Ciss@Vds):
1080pF@25V
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Continuous Drain Current (Id):
9A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
280mΩ@10V,4.5A
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
280mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
21nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1080pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2.5W (Ta), 55W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D-Pak
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
FQD1
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detail:
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak
