FDD850N10L دیتاشیت

FDD850N10L

مشخصات دیتاشیت

نام دیتاشیت FDD850N10L
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FDD850N10L

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سایر مستندات

FDD850N10L 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDD850N10L
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 50W
  • Total Gate Charge (Qg@Vgs): 28.9nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 1465pF@25V
  • Continuous Drain Current (Id): 15.7A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@12A,10V
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FDD850
  • detail: N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK

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