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FDB3502 8 pages

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDB3502
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W;41W
Total Gate Charge (Qg@Vgs): 11nC@10V
Drain Source Voltage (Vdss): 75V
Input Capacitance (Ciss@Vds): 615pF@40V
Continuous Drain Current (Id): 6A;14A
Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds): 35pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@10V,6A
Package: TO-263AB
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 40V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: FDB350
detail: N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount TO-263AB