FDMS4435BZ دیتاشیت

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دانلود دیتاشیت FDMS4435BZ	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS4435BZ
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.5W;39W
Total Gate Charge (Qg@Vgs): 47nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 2050pF@15V
Continuous Drain Current (Id): 9A;18A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,9A
Package: PQFN-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN
Base Part Number: FDMS44
detail: P-Channel 30V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6)