- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت NSV60200LT1G
NSV60200LT1G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NSV60200LT1G |
|---|---|
| حجم فایل | 103.56 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت NSV60200LT1G |
دانلود دیتاشیت |
|---|
سایر مستندات
NSS60200LT1G 5 pages
NSV60200LT1G 5 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi NSV60200LT1G
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 2A
- Power Dissipation (Pd): 460mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 150@500mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 180mV@1A,10mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 460mW
- Frequency - Transition: 100MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: NSV602
- detail: Bipolar (BJT) Transistor PNP 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)