PCP1208-TD-H 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi PCP1208-TD-H
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 700mA
- Power Dissipation (Pd): 3.5W
- Transition Frequency (fT): 120MHz
- DC Current Gain (hFE@Ic,Vce): 200@100mA,5V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 200V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 115mV@350mA,35mA
- Package: SOT-89-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 35mA, 350mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 1.3W
- Frequency - Transition: 120MHz
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
- Base Part Number: PCP1208
- detail: Bipolar (BJT) Transistor NPN 200V 700mA 120MHz 1.3W Surface Mount PCP