دیتاشیت PCP1208-TD-H
مشخصات دیتاشیت
| نام دیتاشیت |
PCP1208
|
| حجم فایل |
382.596
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi PCP1208-TD-H
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
700mA
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Power Dissipation (Pd):
3.5W
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Transition Frequency (fT):
120MHz
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DC Current Gain (hFE@Ic,Vce):
200@100mA,5V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
200V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
115mV@350mA,35mA
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Package:
SOT-89-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
700mA
-
Voltage - Collector Emitter Breakdown (Max):
200V
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Vce Saturation (Max) @ Ib, Ic:
200mV @ 35mA, 350mA
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Current - Collector Cutoff (Max):
1µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 5V
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Power - Max:
1.3W
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Frequency - Transition:
120MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
PCP
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Base Part Number:
PCP1208
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detail:
Bipolar (BJT) Transistor NPN 200V 700mA 120MHz 1.3W Surface Mount PCP
