EFC2K103NUZTDG دیتاشیت

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مشاهده دیتاشیت EFC2K103NUZTDG-Isee	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(Common Drain)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi EFC2K103NUZTDG
Operating Temperature: +150°C@(Tj)
Power Dissipation (Pd): 3.3W
Total Gate Charge (Qg@Vgs): 62nC@3.8V
Drain Source Voltage (Vdss): 12V
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): 40A
Gate Threshold Voltage (Vgs(th)@Id): 1.3V@1mA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@5A,4.5V
Package: WLCSP-10
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.3W (Ta)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-WLCSP (3.54x1.77)
Base Part Number: EFC2K103
detail: Mosfet Array 2 N-Channel (Dual) Common Drain 12V 40A (Ta) 3.3W (Ta) Surface Mount 10-WLCSP (3.54x1.77)