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- دیتاشیت NVD6416ANLT4G-VF01
NVD6416ANLT4G-VF01 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | NVD6416ANLT4G-VF01 |
|---|---|
| حجم فایل | 88.89 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت NVD6416ANLT4G-VF01 |
دانلود دیتاشیت |
|---|
سایر مستندات
NTD6416ANL, NVD6416ANL 7 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi NVD6416ANLT4G-VF01
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 71W
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 700pF@25V
- Continuous Drain Current (Id): 19A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 62mΩ@10V,10A
- Package: TO-252
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1nF @ 25V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK (SINGLE GAUGE)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: NVD641
- detail: N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK (SINGLE GAUGE)